IQDH35N03LM5SCATMA1 vs IQE022N06LM5CGATMA1 Vergleich
Detaillierter Direktvergleich von IQDH35N03LM5SCATMA1 von Infineon und IQE022N06LM5CGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 ✓ AktivInfineon
IQE022N06LM5CGATMA1 - 60V OptiMOS 5 N-Ch MOSFET, 2.2mΩ | Infineon
IQE022N06LM5CGATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQDH35N03LM5SCATMA1 | IQE022N06LM5CGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,05 | $0,78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Transistortyp | N-Channel MOSFET | — |
| Technology | OptiMOS 5 (trench, shielded-gate) | N-Channel Power MOSFET (Enhancement Mode) |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at Ta | 66 A | — |
| Pulsed Drain Current (IDM) at Tc | 700 A | — |
| On-State Resistance (RDS(on)) max | 0.35 mOhm @ VGS=10V | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 278 W | — |
| Gehäuse | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) | PG-TTFN-9-3 (PQFN 3.3x3.3 mm) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 C to +175 C | -55C to +150C |
| MSL-Level | 1 (unlimited) | — |
| RoHS-Status | Compliant | Compliant |
| Marking | IQDH35N03LM5S | — |
| Part Family | — | OptiMOS 5 |
| Drain-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D) at T_A=25C | — | 24 A |
| Continuous Drain Current (I_D) at T_C=25C | — | 151 A |
| R_DS(on) (typical, V_GS=10V) | — | 2.2 mΩ |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) value] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G value] |
| Power Dissipation (T_A) | — | 2.5 W |
| Power Dissipation (T_C) | — | 100 W |
| Pin-Anzahl | — | 9 (with exposed thermal pad) |
| Lead-Free | — | Yes |