IQE008N03LM5SCATMA1 vs IQE012N03LM5CGSCATMA1 Vergleich
Detaillierter Direktvergleich von IQE008N03LM5SCATMA1 von Infineon und IQE012N03LM5CGSCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQE012N03LM5CGSCATMA1 - 30V 1.15mΩ OptiMOS 5 MOSFET | Infineon
IQE012N03LM5CGSCATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQE008N03LM5SCATMA1 | IQE012N03LM5CGSCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,18 | $1,55 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| Technology | Trench MOSFET (N-Channel) | OptiMOS 5 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) | 252 A | — |
| On-Resistance (RDS(on)) max | 0.85 mΩ at VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typical) | 2 V (typ, per Merlin listing) |
| Gate Drive Voltage | 10 V (recommended) | — |
| Gehäuse | PG-WHSON-8 (Source-Down) | PG-WHTFN-9-1 (PQFN 3.3 × 3.3 mm Source-Down dual-side cooled) |
| Configuration | Single N-Channel | — |
| Montageart | Surface Mount | Surface Mount |
| Cooling Architecture | Source-Down, dual-side cooling | — |
| Betriebstemperaturbereich | -55 °C to +150 °C | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020, floor life unlimited) |
| RoHS-Status | Compliant | Compliant |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) @ Ta | — | 34 A |
| Continuous Drain Current (ID) @ Tc | — | 224 A |
| Maximum RDS(on) @ VGS=10V | — | 1.15 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 107 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |
| Lead-Free | — | Yes |