IQE020N04LM6CGATMA1 vs IQE013N04LM6ATMA1 Vergleich
Detaillierter Direktvergleich von IQE020N04LM6CGATMA1 von Infineon und IQE013N04LM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQE013N04LM6ATMA1 - 40V 1.35mΩ OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQE020N04LM6CGATMA1 | IQE013N04LM6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,75 | $0,71 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TA=25°C | 25 A | — |
| Continuous Drain Current (ID) at TC=25°C | 166 A | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Power Dissipation (PD) at TC=25°C | 107 W | — |
| On-State Resistance (RDS(on)) typical @ VGS=10V | 2.0 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge (Qg) typical | [DATA_NEEDED: Qg value] | — |
| Gehäuse | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55°C to +150°C | -55 °C to +175 °C |
| Technology | OptiMOS 6, TrenchFET-class | OptiMOS N-channel trench MOSFET |
| Configuration | Single N-Channel, source-down | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | MSL1 (per JEDEC J-STD-020) | — |
| Polarity | — | N-Channel |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (Ta) | — | 31 A |
| Continuous Drain Current (Tc) | — | 205 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 107 W |
| On-Resistance RDS(on) max | — | [DATA_NEEDED: RDS(on) max value at VGS=10V] |
| On-Resistance RDS(on) typ | — | 1.35 mΩ @ VGS=10 V, ID=20 A |
| Gate Threshold Voltage (VGS(th)) | — | 2 V (typ) |
| Source-Down Topology | — | Yes (flip-chip die attach, drain on top thermal pad) |