IQE022N06LM5CGSCATMA1 vs IQE050N08NM5CGATMA1 Vergleich
Detaillierter Direktvergleich von IQE022N06LM5CGSCATMA1 von Infineon und IQE050N08NM5CGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΩ Source-Down | Infineon
IQE050N08NM5CGATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQE022N06LM5CGSCATMA1 | IQE050N08NM5CGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,05 | $1,75 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (TC) | 151 A | — |
| Continuous Drain Current (TA) | 24 A | — |
| Maximum Power Dissipation (TC) | 100 W | — |
| Maximum Power Dissipation (TA) | 2.5 W | — |
| RDS(on) Maximum at VGS=10V | 2.2 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2.3 V (typ) | — |
| Gehäuse | PG-WHTFN-9 (5x6 mm) | PG-TTFN-9-1 (Surface Mount) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C | — |
| Technology Family | OptiMOS 5 | — |
| Pin-Anzahl | 9 (PG-WHTFN-9) | — |
| MSL-Level | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: MSL rating] |
| RoHS-Status | Compliant | Compliant |
| Continuous Drain Current (Ta) | — | 16 A |
| Continuous Drain Current (Tc) | — | 101 A |
| On-Resistance RDS(on) Max | — | 5.0 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 100 W |
| Technology | — | OptiMOS 5 (Source-Down) |
| Gate Threshold Vgs(th) Typ | — | [DATA_NEEDED: Vgs(th) typical value] |
| Betriebstemperatur | — | -55°C to +175°C (TJ max) |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: total gate charge Qg typical] |