IQE031N08LM6CGSCATMA1 vs IQE050N08NM5CGATMA1 Vergleich
Detaillierter Direktvergleich von IQE031N08LM6CGSCATMA1 von Infineon und IQE050N08NM5CGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 ✓ AktivInfineon
IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΩ Source-Down | Infineon
IQE050N08NM5CGATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQE031N08LM6CGSCATMA1 | IQE050N08NM5CGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,74 | $1,75 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 (40 V to 100 V) | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-to-Source Voltage (VDS max) | 80 V | — |
| Continuous Drain Current (ID) at Ta=25C | 18 A | — |
| Continuous Drain Current (ID) at Tc | 127 A | — |
| Power Dissipation (PD) at Ta=25C | 2.5 W | — |
| Power Dissipation (PD) at Tc | 125 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance RDS(on) max | [DATA_NEEDED: RDS(on) at VGS=10 V] | — |
| Gate Drive Level | Logic-level | — |
| Gehäuse | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) | PG-TTFN-9-1 (Surface Mount) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 C to +175 C (junction, typical for OptiMOS 6) | — |
| Avalanche Tested | 100% avalanche tested | — |
| MSL-Level | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) | [DATA_NEEDED: MSL rating] |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (Ta) | — | 16 A |
| Continuous Drain Current (Tc) | — | 101 A |
| On-Resistance RDS(on) Max | — | 5.0 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 100 W |
| Technology | — | OptiMOS 5 (Source-Down) |
| Gate Threshold Vgs(th) Typ | — | [DATA_NEEDED: Vgs(th) typical value] |
| Betriebstemperatur | — | -55°C to +175°C (TJ max) |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: total gate charge Qg typical] |