IQE065N10NM5CGSCATMA1 vs IQE012N03LM5CGSCATMA1 Vergleich
Detaillierter Direktvergleich von IQE065N10NM5CGSCATMA1 von Infineon und IQE012N03LM5CGSCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQE012N03LM5CGSCATMA1 - 30V 1.15mΩ OptiMOS 5 MOSFET | Infineon
IQE012N03LM5CGSCATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQE065N10NM5CGSCATMA1 | IQE012N03LM5CGSCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,28 | $1,55 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25 C | 85 A | — |
| Continuous Drain Current (ID) at TA | 13 A | — |
| On-Resistance (RDS(on)) max at VGS=10V | 6.5 mOhm | — |
| Power Dissipation at TA | 2.5 W | — |
| Power Dissipation at TC | 100 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 2 V (typ, per Merlin listing) |
| Gehäuse | PG-WHTFN-9-1 (Source-Down) | PG-WHTFN-9-1 (PQFN 3.3 × 3.3 mm Source-Down dual-side cooled) |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench-gate | OptiMOS 5 (trench MOSFET) |
| Betriebstemperaturbereich | -55 C to +150 C | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) @ Ta | — | 34 A |
| Continuous Drain Current (ID) @ Tc | — | 224 A |
| Maximum RDS(on) @ VGS=10V | — | 1.15 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 107 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |
| MSL-Level | — | 1 (per JEDEC J-STD-020, floor life unlimited) |