IQE065N10NM5CGSCATMA1 vs IQE036N08NM6CGSCATMA1 Vergleich
Detaillierter Direktvergleich von IQE065N10NM5CGSCATMA1 von Infineon und IQE036N08NM6CGSCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGSCATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQE065N10NM5CGSCATMA1 | IQE036N08NM6CGSCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,28 | $0,88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 6 |
| Transistortyp | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25 C | 85 A | — |
| Continuous Drain Current (ID) at TA | 13 A | 16.7 A |
| On-Resistance (RDS(on)) max at VGS=10V | 6.5 mOhm | — |
| Power Dissipation at TA | 2.5 W | — |
| Power Dissipation at TC | 100 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gehäuse | PG-WHTFN-9-1 (Source-Down) | — |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench-gate | Trench MOSFET (OptiMOS 6) |
| Betriebstemperaturbereich | -55 C to +150 C | -55 C to +150 C (junction, per datasheet derating curves) |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at TC | — | 118 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 125 W |
| Gehäuse / Bauform | — | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) |
| Configuration | — | Source Down, Center Gate, Dual-Side Cooling |
| Packing | — | Tape and Reel (suffix ATMA1) |
| Voltage Rating | — | 60 V to 100 V category (80 V nominal) |