IQEH54NE2LM7UCGATMA1 vs IQE050N08NM5CGATMA1 Vergleich

Detaillierter Direktvergleich von IQEH54NE2LM7UCGATMA1 von Infineon und IQE050N08NM5CGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IQEH54NE2LM7UCGATMA1 IQE050N08NM5CGATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,95 $1,75
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 Power-Transistor —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 25 V 80 V
Continuous Drain Current (ID) at Ta 52 A —
Continuous Drain Current (ID) at Tc 406 A —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 150 W —
Gehäuse PG-TTFN-9-3 PG-TTFN-9-1 (Surface Mount)
Montageart Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
On-Resistance (RDS(on)) at 10V VGS [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical in nC] —
Betriebstemperaturbereich -55C to +150C (typical MOSFET range) —
RoHS-Status Compliant Compliant
MSL-Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
FET Type — N-Channel
Continuous Drain Current (Ta) — 16 A
Continuous Drain Current (Tc) — 101 A
On-Resistance RDS(on) Max — 5.0 mΩ
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 100 W
Technology — OptiMOS 5 (Source-Down)
Gate Threshold Vgs(th) Typ — [DATA_NEEDED: Vgs(th) typical value]
Betriebstemperatur — -55°C to +175°C (TJ max)
Total Gate Charge Qg Typ — [DATA_NEEDED: total gate charge Qg typical]

Datenblätter & Ressourcen

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