IR2104STRPBF vs 2EDL8033G4BXTMA1 Vergleich

Detaillierter Direktvergleich von IR2104STRPBF von Infineon und 2EDL8033G4BXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IR2104STRPBF 2EDL8033G4BXTMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,59 $1,49
Product Type Half-Bridge Gate Driver IC —
Configuration High-side and low-side referenced output channels —
Anzahl der Ausgänge 2 (high-side + low-side) —
Offset Voltage (High-Side, Max) 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Output Source Current (typ) 0.21 A —
Output Sink Current (typ) 0.36 A —
Rise Time (typ) 100 ns —
Fall Time (typ) 50 ns —
Propagation Delay (typ) 680 ns —
Turn-On Propagation Delay (typ) 150 ns —
Turn-Off Propagation Delay (typ) 130 ns —
Quiescent Current (VCC/VBS, typ) 150 uA —
Input Logic Compatibility 3.3 V, 5 V, 15 V logic TTL
Shutdown Pin Yes (active-low shutdown input) —
Undervoltage Lockout Yes (VCC and VBS) —
Cross-Conduction Prevention Yes (matched propagation delay) —
dV/dt Immunity Yes —
Negative VS Transient Tolerance Yes —
Betriebstemperaturbereich -40 C to +150 C —
Gehäuse 8-SOIC (SOIC-8) PG-VDSON-8-5
Montageart Surface Mount Surface Mount
RoHS-Status Compliant Compliant
Topologie — Half-bridge (high-side + low-side)
Maximum Bootstrap Voltage (VBS) — 120 V
Source Drive Current — 3 A
Sink Drive Current — 4 A
Number of Channels — 2 (HS + LS)
Isolation Type — Junction-isolated (non-galvanic)
Input Common-Mode Range — -10 V to 20 V
Input Type — Independent HS and LS
Integrated Dead-Time Control — Yes (programmable)
Under-Voltage Lockout (VCC/VDD) — Yes
Under-Voltage Lockout (VBS/High-Side) — Yes
Shoot-Through Protection — Yes
Marking Code — 2ED8033G4B

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