IR21271SPBF vs IR2127STRPBF Vergleich

Detaillierter Direktvergleich von IR21271SPBF von Infineon und IR2127STRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IR21271SPBF IR2127STRPBF
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,71 $0,71
Product Type Single-channel high-side gate driver with current sensing —
Technology HVIC and latch-immune CMOS —
Maximum Floating Supply Voltage 600 V —
Output Source Current 0.25 A —
Output Sink Current 0.5 A —
Gate Drive Voltage Range 9 V to 20 V (per related IR2127 datasheet family) —
Configuration High-side, low-side capable (floating channel) High-Side
Input Logic Compatibility 3.3 V CMOS / LSTTL —
Input Type Non-inverting —
Negative Transient Tolerance (dV/dt) Tolerant —
Bootstrap Operation Supported (floating channel) —
Integrated Current Sensing Yes —
Gehäuse 8-SOIC 8-SOIC (3.90 mm body)
Lead Finish Lead-free (PbF) —
Betriebstemperaturbereich -40C to +125C (industrial) -40C to +125C
Montageart Surface Mount Surface Mount
RoHS-Status Compliant —
Number of Channels 1 —
Supply Voltage Range — 12 V to 20 V
Output Voltage (Offset) — up to 600 V
Peak Source Current — 250 mA
Peak Sink Current — 500 mA
Propagation Delay — 200 ns (typical)
Input Logic — Non-Inverting
Anzahl der Ausgänge — 1
Anstiegszeit — 80 ns (typical)
Abfallzeit — 60 ns (typical)
MSL-Level — MSL3 (per JEDEC J-STD-020)
Lead-Free / RoHS — Pb-free (PBF), RoHS compliant
dV/dt Immunity — Yes (high-side floating channel)
Integrated Current Sense — Yes (cycle-by-cycle comparator)

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