IR2127STRPBF vs IR21271SPBF Vergleich

Detaillierter Direktvergleich von IR2127STRPBF von Infineon und IR21271SPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IR2127STRPBF IR21271SPBF
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,71 $0,71
Configuration High-Side High-side, low-side capable (floating channel)
Supply Voltage Range 12 V to 20 V —
Output Voltage (Offset) up to 600 V —
Peak Source Current 250 mA —
Peak Sink Current 500 mA —
Propagation Delay 200 ns (typical) —
Input Logic Non-Inverting —
Anzahl der Ausgänge 1 —
Anstiegszeit 80 ns (typical) —
Abfallzeit 60 ns (typical) —
Betriebstemperaturbereich -40C to +125C -40C to +125C (industrial)
Gehäuse 8-SOIC (3.90 mm body) 8-SOIC
Montageart Surface Mount Surface Mount
MSL-Level MSL3 (per JEDEC J-STD-020) —
Lead-Free / RoHS Pb-free (PBF), RoHS compliant —
dV/dt Immunity Yes (high-side floating channel) —
Integrated Current Sense Yes (cycle-by-cycle comparator) —
Product Type — Single-channel high-side gate driver with current sensing
Technology — HVIC and latch-immune CMOS
Maximum Floating Supply Voltage — 600 V
Output Source Current — 0.25 A
Output Sink Current — 0.5 A
Gate Drive Voltage Range — 9 V to 20 V (per related IR2127 datasheet family)
Input Logic Compatibility — 3.3 V CMOS / LSTTL
Input Type — Non-inverting
Negative Transient Tolerance (dV/dt) — Tolerant
Bootstrap Operation — Supported (floating channel)
Integrated Current Sensing — Yes
Lead Finish — Lead-free (PbF)
RoHS-Status — Compliant
Number of Channels — 1

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