IR2128STRPBF vs IRS21867STRPBF Vergleich

Detaillierter Direktvergleich von IR2128STRPBF von Infineon und IRS21867STRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IR2128STRPBF IRS21867STRPBF
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,86 $1,55
Configuration High-Side, Low-Side Gate Driver —
Input Polarity Inverting —
Number of Drivers 1 —
Maximum Offset Voltage (Voffset) 600 V —
Gate Drive Supply Voltage (VCC) 12 V to 20 V —
Source Current (typ.) 0.25 A —
Sink Current (typ.) 0.5 A —
Propagation Delay (typ.) 200 ns —
Logic Input Compatibility 3.3 V / 5 V CMOS, LSTTL —
Undervoltage Lockout (UVLO) Yes —
Over-Current Protection Yes (current-sense comparator, fault output) —
dv/dt Immunity Yes —
Negative VS Transient Tolerance Yes —
Betriebstemperaturbereich -40C to +125C —
Gehäuse 8-SOIC (0.154", 3.90 mm width) 8-SOIC (SOIC-8, 8-pin SOIC N T/R)
Montageart Surface Mount Surface Mount
MSL-Level 2 2
Lead-Free / RoHS Yes (PBF suffix indicates Pb-free) —
Fault Output Open-drain, active-low —
Bootstrap Pin VB (with respect to VS) —
Topologie — High-Side and Low-Side (Half-Bridge)
Offset Voltage (High-Side, max) — 600 V
Output Current (Source/Sink, typical) — 4 A / 4 A
Supply Voltage VCC — 10 V to 20 V
Bootstrap Supply VBS — up to VCC + 600 V (floating)
Input Logic Compatibility — 3.3 V and 5 V CMOS / TTL
Rise Time (typ, 1 nF load) — 22 ns
Fall Time (typ, 1 nF load) — 18 ns
Turn-On Propagation Delay (typ) — 170 ns
Turn-Off Propagation Delay (typ) — 170 ns
Undervoltage Lockout — Yes (VCC and VBS)
Operating Temperature Range (TJ) — -40C to +150C
RoHS-Status — Compliant
Lead-Free Status — Lead Free
Channel Count — 2 (1 high-side + 1 low-side)
Input Type — Non-Inverting (HIN, LIN)

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