IR2130SPBF vs IR2132SPBF Vergleich

Detaillierter Direktvergleich von IR2130SPBF von Infineon und IR2132SPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IR2130SPBF IR2132SPBF
Marke Infineon Infineon
Kategorie Motor Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $4,25 $5,55
Driver Type Half-Bridge / 3-Phase Bridge —
Number of Channels 3 high-side + 3 low-side —
Configuration Inverting Inverting input
Maximum Offset Voltage (High Side) 600 V —
Supply Voltage (VCC) 10 V to 20 V —
Output Source/Sink Current 200 mA / 420 mA typical; 500 mA peak —
Logic Input Compatibility CMOS/LSTTL down to 2.5 V CMOS/LSTTL, down to 2.5 V logic
Propagation Delay (Typ.) 425 ns —
Integrated Op-Amp Yes (ground-referenced current sense) —
Fault Output Yes (active-low FAULT pin) —
Under-Voltage Lockout Yes (VCC and VBS) —
Betriebstemperatur -40 C to +125 C —
Gehäuse 28-SOIC (300 mil) 28-SOIC (Wide Body, 7.50 mm)
Montageart Surface Mount Surface Mount
RoHS-Status Compliant (PbF suffix) —
Lead-Free Yes —
MSL-Level 3 (168 hours) —
Part Number — IR2132SPBF
Manufacturer — Infineon Technologies (formerly International Rectifier)
Funktion — Half-Bridge Gate Driver IC (3-phase, 6-channel)
Anzahl der Ausgänge — 6 (3 high-side, 3 low-side)
Maximum Offset Voltage (High-Side) — 600 V
Output Current (Source/Sink) — 0.5 A
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Typical Deadtime — 0.8 us
Undervoltage Lockout (UVLO) — Yes, all 6 channels
Bootstrap Design — Required for high-side channels
dV/dt Immunity — Yes
Negative VS Transient Tolerance — Yes
Betriebstemperaturbereich — -40C to +125C
Lead-Free / RoHS — Yes (PbF suffix, RoHS compliant)
Packaging — Tube
Topologie — 3-phase bridge driver for MOSFETs/IGBTs

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