IRF1407PBF vs IRFB4310PBF Vergleich

Detaillierter Direktvergleich von IRF1407PBF von Infineon und IRFB4310PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF1407PBF IRFB4310PBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,86 $1,95
FET Type N-Channel —
Technology HEXFET (stripe-planar MOSFET) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 75 V 100 V
Continuous Drain Current (ID) at TC=25C 130 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC=25C 330 W —
On-Resistance RDS(on) at VGS=10V 7.8 mOhm (typical) —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS threshold typical/min/max] —
Gate Charge (Qg) 160 nC (typical) —
Maximum Junction Temperature 175 C —
Betriebstemperaturbereich -55 C to +175 C -55C to +175C (junction)
Gehäuse TO-220AB (through-hole, 3 leads) TO-220AB (through-hole)
Montageart Through Hole Through Hole
Lead-Free / RoHS Lead-free, RoHS compliant (PBF suffix) —
Avalanche Rating Repetitive avalanche rated —
Transistortyp — N-Channel MOSFET
Continuous Drain Current (ID) at Tc=25C — 130 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Maximum Power Dissition (PD) at Tc=25C — 300 W
On-Resistance RDS(on) max at VGS=10V — 7 mOhm
On-Resistance RDS(on) typical at VGS=10V — 5.6 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS maximum rating]
Total Gate Charge (Qg) — 170 nC
Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typical]
Avalanche Rated — Yes
RoHS-Status — Compliant
Lead-Free — Yes (Pb-free PBF suffix)

Datenblätter & Ressourcen

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