IRF1407PBF vs IRFB4410PBF Vergleich

Detaillierter Direktvergleich von IRF1407PBF von Infineon und IRFB4410PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF1407PBF IRFB4410PBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,86 $1,15
FET Type N-Channel N-Channel
Technology HEXFET (stripe-planar MOSFET) MOSFET (Metal Oxide) - HEXFET
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID) at TC=25C 130 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at TC=25C 330 W —
On-Resistance RDS(on) at VGS=10V 7.8 mOhm (typical) —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS threshold typical/min/max] —
Gate Charge (Qg) 160 nC (typical) —
Maximum Junction Temperature 175 C —
Betriebstemperaturbereich -55 C to +175 C -55C to +175C (Tj)
Gehäuse TO-220AB (through-hole, 3 leads) TO-220AB (through-hole)
Montageart Through Hole Through Hole
Lead-Free / RoHS Lead-free, RoHS compliant (PBF suffix) —
Avalanche Rating Repetitive avalanche rated —
Drain-to-Source Voltage (Vdss) — 100 V
Continuous Drain Current (Id) @ 25C — 88 A (Tc)
Continuous Drain Current (Id) @ 100C — [DATA_NEEDED: Id @ 100C]
Pulsed Drain Current (Idm) — [DATA_NEEDED: Idm pulse]
Gate-to-Source Voltage (Vgs) — [DATA_NEEDED: Vgs max]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]
RDS(on) max @ VGS=10V — 10 mOhm
Total Gate Charge (Qg) — 120 nC
Power Dissipation (Pd) — 200 W (Tc)
Avalanche Energy Rating — Single-pulse avalanche rated
MSL-Level — 1 (unlimited)
RoHS-Status — Compliant (Pb-free PBF suffix)
Series — HEXFET

Datenblätter & Ressourcen

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