IRF7416TRPBF vs IRF7306TRPBF Vergleich

Detaillierter Direktvergleich von IRF7416TRPBF von Infineon und IRF7306TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF7416TRPBF IRF7306TRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,32 $0,55
FET Type P-Channel —
Technology HEXFET (IR MOSFET) HEXFET Power MOSFET (Generation V)
Drain-to-Source Voltage (VDS) -30 V -30 V
Continuous Drain Current (ID) at TA=25C -10 A —
Pulsed Drain Current (IDM) -50 A —
Static Drain-to-Source On-Resistance (RDS(on)) max 20 mOhm at VGS = -10 V —
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) -1 V to -3 V —
Total Gate Charge (Qg) 61 nC —
Power Dissipation (PD) max at TA=25C 2.5 W —
Thermal Resistance, Junction-to-Ambient (RthJA) 50 C/W —
Betriebs-Sperrschichttemperaturbereich -55 C to +150 C —
Gehäuse 8-SO (SOIC-8) 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width)
Montageart Surface Mount Surface Mount
RoHS-Status Compliant —
Lead-Free Yes —
MSL-Level 1 (unlimited) 1 (per JEDEC J-STD-020)
Polarity — P-Channel (dual)
Number of Channels — 2 (independent, in single package)
Continuous Drain Current (ID) — -3.6 A at 25°C
On-Resistance RDS(on) max — 100 mOhm at VGS = -10 V
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg total]
Maximum Power Dissipation — 2 W at TA = 25°C
Betriebstemperaturbereich — -55°C to +150°C (junction)
Packaging — Tape & Reel (TR)
RoHS Compliance — Yes (PBF suffix indicates Pb-free)
Qualification — Consumer market qualification standards (per IR/Infineon datasheet)
Avalanche Rated — Yes (ruggedized device per datasheet)

Datenblätter & Ressourcen

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