IRFB4310PBF vs IRF1407PBF Vergleich

Detaillierter Direktvergleich von IRFB4310PBF von Infineon und IRF1407PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFB4310PBF IRF1407PBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,95 $0,86
Transistortyp N-Channel MOSFET —
Technology HEXFET (IR MOSFET) HEXFET (stripe-planar MOSFET)
Drain-Source Voltage (VDS) 100 V 75 V
Continuous Drain Current (ID) at Tc=25C 130 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Maximum Power Dissition (PD) at Tc=25C 300 W —
On-Resistance RDS(on) max at VGS=10V 7 mOhm —
On-Resistance RDS(on) typical at VGS=10V 5.6 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS maximum rating] —
Total Gate Charge (Qg) 170 nC —
Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical] —
Betriebstemperaturbereich -55C to +175C (junction) -55 C to +175 C
Gehäuse TO-220AB (through-hole) TO-220AB (through-hole, 3 leads)
Montageart Through Hole Through Hole
Avalanche Rated Yes —
RoHS-Status Compliant —
Lead-Free Yes (Pb-free PBF suffix) —
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25C — 130 A
Power Dissipation (PD) at TC=25C — 330 W
On-Resistance RDS(on) at VGS=10V — 7.8 mOhm (typical)
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS threshold typical/min/max]
Gate Charge (Qg) — 160 nC (typical)
Maximum Junction Temperature — 175 C
Lead-Free / RoHS — Lead-free, RoHS compliant (PBF suffix)
Avalanche Rating — Repetitive avalanche rated

Datenblätter & Ressourcen

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