IRFH5020TRPBF vs IRF7416TRPBF Vergleich
Detaillierter Direktvergleich von IRFH5020TRPBF von Infineon und IRF7416TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFH5020TRPBF | IRF7416TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,36 | $0,32 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Product Family | HEXFET Power MOSFET | — |
| FET Type | MOSFET N-Channel, Metal Oxide | P-Channel |
| Configuration | Single with built-in diode | — |
| Drain-to-Source Voltage (VDS) | 200 V | -30 V |
| Continuous Drain Current (ID) at TA=25°C | 5.1 A | — |
| Pulsed Drain Current (IDM) | 63 A | -50 A |
| Gate-to-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max rating] |
| RDS(on) max at VGS=10V | 55 mΩ | — |
| Gate Charge (Qg) typ | 11 nC | — |
| Power Dissipation (TA=25°C) | 3.6 W | — |
| Verlustleistung (TC=25°C) | 8.3 W | — |
| Thermal Resistance, Junction-to-PCB (RthJB) | 0.8 °C/W | — |
| Package Type | 8-PQFN (5x6 mm) SuperSO8 | — |
| Montageart | Surface Mount | Surface Mount |
| Profile Height | ≤ 0.9 mm | — |
| Betriebstemperaturbereich | -55 °C to +150 °C (TJ max) | — |
| Qualification Standard | JEDEC (Normal level) | — |
| Gate Drive Optimization | 10 V VGS | — |
| RoHS Compliance | Compliant (Pb-free suffix PBF) | — |
| MSL-Level | 1 (per industry standard for PQFN-8) | 1 (unlimited) |
| Technology | — | HEXFET (IR MOSFET) |
| Continuous Drain Current (ID) at TA=25C | — | -10 A |
| Static Drain-to-Source On-Resistance (RDS(on)) max | — | 20 mOhm at VGS = -10 V |
| Gate Threshold Voltage (VGS(th)) | — | -1 V to -3 V |
| Total Gate Charge (Qg) | — | 61 nC |
| Power Dissipation (PD) max at TA=25C | — | 2.5 W |
| Thermal Resistance, Junction-to-Ambient (RthJA) | — | 50 C/W |
| Betriebs-Sperrschichttemperaturbereich | — | -55 C to +150 C |
| Gehäuse | — | 8-SO (SOIC-8) |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes |