IRFH8201TRPBF vs BSC014N04LSATMA1 Vergleich
Detaillierter Direktvergleich von IRFH8201TRPBF von Infineon und BSC014N04LSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFH8201TRPBF | BSC014N04LSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,05 | $0,74 |
| FET Type | N-Channel | — |
| Technology | StrongIRFET (trench MOSFET) | Trench (OptiMOS 5, thin-wafer) |
| Drain-Source Voltage (VDS) | 25 V | 40 V |
| Continuous Drain Current (ID) at TA=25C | 49 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | 324 A | — |
| RDS(on) max at VGS=10V | 0.95 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 1.35 V max | — |
| Total Gate Charge (Qg) | 56 nC at VGS=10V | — |
| Output Capacitance (Coss) | 7.33 nF | — |
| Reverse Transfer Capacitance (Crss) | 850 pF | — |
| Power Dissipation (TA) | 3.6 W | — |
| Power Dissipation (TC) | 156 W | — |
| Betriebstemperaturbereich | -55C to +150C | -55C to +175C |
| Gehäuse | SuperSO8 5x6 (PQFN-8) with exposed pad | SuperSO8 (TDSON-8 FL) 5x6 mm |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL level] | 1 (unlimited) |
| RoHS-Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 32 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 96 W |
| Gate-Source Voltage (VGS) max | — | 20 V |