IRFR5305TRPBF vs IPD50P04P4L11ATMA2 Vergleich

Detaillierter Direktvergleich von IRFR5305TRPBF von Infineon und IPD50P04P4L11ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IPD50P04P4L11ATMA2 IPD50P04P4L11ATMA2 - P-Ch 40V 50A 10.6mΩ MOSFET | Infineon

IPD50P04P4L11ATMA2 - P-Ch 40V 50A 10.6mΩ MOSFET | Infineon

IPD50P04P4L11ATMA2 ✓ Aktiv

Spezifikationsvergleich

Parameter IRFR5305TRPBF IPD50P04P4L11ATMA2
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,32 $0,82
Polarity P-Channel —
Drain-Source Voltage (VDS) Max -55 V —
Continuous Drain Current (ID) at TC=25C 31 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
On-Resistance (RDS(on)) Max at VGS=-10V 65 mOhm —
Gate-Source Threshold Voltage (VGS(th)) -2 V to -4 V —
Gate Charge (Qg) Typ [DATA_NEEDED: Qg typ] —
Power Dissipation (PD) at TC=25C 110 W —
Single-Pulse Avalanche Energy (EAS) 270 mJ —
Betriebstemperaturbereich -55 C to +175 C —
Gehäuse TO-252AA (DPAK) PG-TO252-3-313 (DPAK), surface mount
Montageart Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) —
MSL-Level 1 [DATA_NEEDED: MSL rating]
RoHS-Status Compliant (Pb-free PBF suffix) —
Lead-Free Finish Yes (PBF suffix) —
Transistortyp — P-Channel MOSFET, enhancement mode
Drain-Source Voltage VDS — -40 V
Continuous Drain Current ID (TC = 25 °C) — -50 A
On-State Resistance RDS(on) (VGS = -10 V) — 10.6 mΩ typical
Gate-Source Voltage VGS (max) — ±20 V
Gate Threshold Voltage VGS(th) — -1.0 V to -2.5 V typical
Typical Gate Charge Qg — 45 nC
Power Dissipation PD (TC = 25 °C) — 58 W
Betriebs-Sperrschichttemperatur — -55 °C to +175 °C
Pin-Anzahl — 3 (Drain / Tab / Source / Gate)
Automotive Qualification — AEC-Q101 qualified
RoHS Compliance — Compliant

Datenblätter & Ressourcen

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