IRFR5410TRPBF vs IRFR5410TRRPBF Vergleich

Detaillierter Direktvergleich von IRFR5410TRPBF von Infineon und IRFR5410TRRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFR5410TRPBF IRFR5410TRRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,71 $0,49
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -100 V —
Continuous Drain Current (ID) at TC = 25 °C -13 A —
Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V 205 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Total Gate Charge (Qg) typ 70 nC —
Gehäuse TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Power Dissition (PD) at TC = 25 °C 66 W —
Betriebstemperaturbereich -55 °C to +150 °C (TJ) —
Montageart Surface Mount Surface Mount
Technology HEXFET (advanced process, Gen 5) HEXFET (5th Generation)
Avalanche Rated Yes (fully avalanche rated) Yes
Lead-Free / RoHS Status Lead-free, RoHS compliant (PBF suffix) —
MSL-Level [DATA_NEEDED: MSL rating] —
RDS(on) Test Conditions VGS = -10 V, ID = -7.0 A —
FET Type — MOSFET (Metal Oxide Semiconductor)
VDS (Drain-Source Voltage) — -100 V
VGS (Gate-Source Voltage) — ±20 V
VGS(th) (Gate Threshold) — -2 V to -4 V
Continuous Drain Current (ID) at Tc=25C — -13 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at 100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
RDS(on) max at VGS=-10V — 205 mΩ
RDS(on) typical at VGS=-10V — 26 mΩ (per Mouser listing for IRFR5410TRPBF)
Total Gate Charge (Qg) — 70 nC
Power Dissipation (Pd) at Tc=25C — 66 W
Betriebs-Sperrschichttemperatur — -55C to +150C
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free)

Datenblätter & Ressourcen

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