IRFS3306TRLPBF vs IRFS3107TRL7PP Vergleich

Detaillierter Direktvergleich von IRFS3306TRLPBF von Infineon und IRFS3107TRL7PP von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFS3306TRLPBF IRFS3107TRL7PP
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,12 $0,85
FET Type N-Channel MOSFET, Metal Oxide N-Channel MOSFET
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) @ Tc=25°C 120 A (Infineon datasheet; 160 A pulsed per IR datasheet family) —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
RDS(on) Max @ VGS=10V 4.2 mΩ 3 mOhm (Infineon) / 2.6 mOhm (Mouser)
Gate Threshold Voltage (VGS(th)) 2.0 V to 4.0 V (typical range) [DATA_NEEDED: VGS(th) typical range]
Total Gate Charge (Qg) 85 nC —
Power Dissipation (PD) @ Tc=25°C 230 W —
Betriebstemperaturbereich -55 °C to +175 °C (junction) -55C to +175C (junction)
Gehäuse D2PAK (TO-263), surface mount D2PAK-7 (TO-263CB, 6 leads + tab)
Montageart Surface Mount Surface Mount
Technology IR MOSFET™ (HEXFET-style planar stripe) IR HEXFET (Planar DMOS)
Lead-Free / Halogen-Free Yes (PbF, Halogen-Free per Infineon datasheet) —
RoHS-Status Compliant Compliant
Tape & Reel Packaging 13-inch reel, 800 pcs/reel typical —
Body Diode dV/dt Capability Enhanced (per Infineon datasheet feature) —
Drain-Source Voltage (VDS) Max — 75 V
Continuous Drain Current (ID) @ Tc=25C — 240 A (DigiKey) / 195 A (per package datasheet snippet)
Gepulster Drain-Strom — [DATA_NEEDED: pulsed ID]
Gate Charge (Qg) Typical — 160 nC
Maximum Power Dissition @ Tc=25C — 370 W
Lead-Free — Yes
MSL-Level — [DATA_NEEDED: MSL rating]

Datenblätter & Ressourcen

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