IRFS52N15DTRLP vs IRFS52N15DPBF Vergleich
Detaillierter Direktvergleich von IRFS52N15DTRLP von Infineon und IRFS52N15DPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFS52N15DTRLP | IRFS52N15DPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,62 | $2,15 |
| FET Type | N-Channel MOSFET | N-Channel |
| Technology | HEXFET (Planar) | HEXFET (Planar Cell) |
| Drain-to-Source Voltage (Vdss) | 150 V | — |
| Continuous Drain Current (Id) @ TC = 25 C | 51 A (Tc) | — |
| Continuous Drain Current (Id) @ TC = 100 C | 36 A (Tc, estimated) | — |
| Continuous Drain Current (Id) @ TA = 25 C | 60 A (Ta, datasheet) | — |
| On-Resistance Rds(on) max @ VGS = 10 V | 32 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V (typical 3 V) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge in nC] | 60 nC (typical) |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd in nC] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss in pF] | [DATA_NEEDED: Ciss] |
| Power Dissipation (Pd) @ TC = 25 C | 230 W (Tc) | — |
| Power Dissipation (Pd) @ TA = 25 C | 3.8 W (Ta) | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC in C/W] | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA in C/W] | — |
| Betriebstemperaturbereich | -55 C to +175 C (junction) | — |
| Gehäuse | D2PAK (TO-263) surface mount | D2PAK (TO-263) Surface Mount |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (Gate, Drain, Source) + tab | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free Finish | Yes (matte tin) | — |
| MSL-Level | 1 (per JEDEC J-STD-020, typical for D2PAK) | 1 (per JEDEC J-STD-020) |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) @ TC=25C | — | 51 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max] |
| RDS(on) max @ VGS=10V | — | 32 mOhm |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| Power Dissipation (PD) @ TA=25C | — | 3.8 W |
| Power Dissipation (PD) @ TC=25C | — | 230 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +175C |
| Qualification Standard | — | JEDEC |
| Lead-Free | — | Yes |