IRFZ34NPBF vs IRFB4110PBF Vergleich
Detaillierter Direktvergleich von IRFZ34NPBF von Infineon und IRFB4110PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFZ34NPBF | IRFB4110PBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,61 | $1,55 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Status | Active | — |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | HEXFET (Planar DMOS, 5th generation) | HEXFET (planar DMOS) |
| Drain-Source Voltage (V_DSS) | 55 V | — |
| Continuous Drain Current (I_D) at Tc=25C | 29 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (P_D) at Tc=25C | 68 W | — |
| On-Resistance R_DS(on) max at V_GS=10V | 40 mOhm | — |
| Gate Charge (Q_g) typ | 22.7 nC | — |
| Gate Threshold Voltage V_GS(th) typ | [DATA_NEEDED: gate threshold voltage] | — |
| Input Capacitance (C_iss) typ | [DATA_NEEDED: input capacitance] | — |
| Betriebstemperaturbereich | -55 C to +175 C | — |
| Maximum Junction Temperature | 175 C | — |
| Gehäuse | TO-220AB (3-pin + tab, through-hole) | TO-220AB (through-hole) |
| Montageart | Through Hole | Through Hole |
| Lead-Free Status | Yes (Pb-free, RoHS compliant) | — |
| Qualification | JEDEC standard | — |
| RoHS-Status | Compliant | Compliant (Pb-free suffix) |
| Configuration | Single N-Channel, 3-pin (3+tab) | — |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A (bond-wire limited) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance RDS(on) max at VGS=10V | — | 4.5 mΩ |
| On-Resistance RDS(on) typ at VGS=10V | — | 3.7 mΩ |
| Power Dissipation (PD) at TC=25°C | — | 370 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |
| Lead-Free | — | Yes (PBF suffix denotes Pb-free) |