IRLB4030PBF vs IRLR120NTRPBF Vergleich

Detaillierter Direktvergleich von IRLB4030PBF von Infineon und IRLR120NTRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRLB4030PBF IRLR120NTRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $3,10 $0,27
Transistortyp N-Channel MOSFET —
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc 180 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) max at VGS=10V 4.3 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) 87 nC 13.3 nC
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V] —
Power Dissipation (PD) at Tc 370 W —
Betriebstemperaturbereich -55C to +175C -55C to +175C (junction)
Gehäuse TO-220AB TO-252AA (DPAK), 3-pin surface mount
Montageart Through Hole Surface Mount
Technology HEXFET (StrongIRFET family) HEXFET (Fifth Generation, planar)
Logic Level Drive Yes (optimized for 4.5 V to 10 V VGS) —
Qualification JEDEC —
RoHS-Status Compliant —
FET Type — N-Channel MOSFET
Drain-to-Source Voltage (Vdss) — 100 V
Continuous Drain Current (Id) at Tc=25C — 10 A
Continuous Drain Current (Id) at Tc=100C — [DATA_NEEDED: Id at Tc=100C]
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed Idm]
Rds(on) Max at Vgs=10V — 185 mΩ
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: typical Vgs(th)]
Power Dissipation (Pd) at Tc=25C — 48 W
Avalanche Energy Rating — Fully avalanche rated
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free)
MSL-Level — 1

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