IRLML0030TRPBF vs IRLML6346TRPBF Vergleich
Detaillierter Direktvergleich von IRLML0030TRPBF von Infineon und IRLML6346TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLML0030TRPBF | IRLML6346TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,13 | $0,18 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 5.3 A | — |
| Drain-Source On-Resistance (RDS(on)) max | 27 mOhm at VGS=4.5V | — |
| Gate-Source Threshold Voltage (VGS(th)) | Logic-level (5 V optimized) | — |
| Total Gate Charge (Qg) | 3.6 nC typical | — |
| Power Dissipation (PD) at TA=25C | 1.3 W | — |
| Betriebstemperaturbereich | -55C to +150C | — |
| Gehäuse | Micro3 / SOT-23 (3-pin) | Micro3 / SOT-23 |
| Montageart | Surface Mount | Surface Mount |
| Technology | IR HEXFET Power MOSFET | HEXFET Power MOSFET |
| MSL-Level | 1 (unlimited floor life per JEDEC J-STD-020) | 1 |
| Soldering | Wave-solder capable | — |
| Qualification | JEDEC standard | — |
| RoHS-Status | Compliant | Compliant |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) | — | 3.4 A (TA=25C) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=2.5V | — | 63 mOhm |
| RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Drive Capability | — | 2.5V logic-level |
| Maximum Power Dissipation (PD) | — | 1.3 W (TA=25C, 1in2 FR4) |
| Betriebs-Sperrschichttemperatur | — | -55C to +150C |
| Lead-Free Finish | — | Yes (PBF suffix) |