IRLML6246TRPBF vs BSS138NH6327XTSA2 Vergleich

Detaillierter Direktvergleich von IRLML6246TRPBF von Infineon und BSS138NH6327XTSA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRLML6246TRPBF BSS138NH6327XTSA2
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,11 $0,15
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRLML6246TRPBF —
Technology IR MOSFET (HEXFET Power MOSFET) —
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 20 V —
Continuous Drain Current (ID) at Ta=25C 4.1 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value] —
On-Resistance RDS(on) max @ VGS=4.5V 46 mOhm —
On-Resistance RDS(on) max @ VGS=2.5V [DATA_NEEDED: RDS(on) at 2.5V] —
Gate Threshold Voltage VGS(th) typ 1.1 V (logic-level) —
Gate Charge Qg typ [DATA_NEEDED: Qg total gate charge] —
Power Dissipation (Ta=25C) 1.3 W —
Betriebstemperaturbereich -55C to +150C (junction) [DATA_NEEDED: Tj max and operating range]
Gehäuse SOT-23 (Micro3) PG-SOT-23 (3-pin)
Montageart Surface Mount Surface Mount
RoHS Compliance Yes (Pb-free) Compliant
Halogenfrei Yes Yes (per IEC 61249-2-21)
MSL-Level MSL1 (per JEDEC J-STD-020) —
Polarity — N-Channel
Operating Mode — Enhancement
V(BR)DSS (Drain-Source Breakdown Voltage) — 60 V
R_DS(on) max @ V_GS=10V — 3.5 ohm
Continuous Drain Current (Ta) — 230 mA
Power Dissipation (Ta) — 360 mW
Gate Threshold V_GS(th) — [DATA_NEEDED: typical V_GS(th) value]
Gate-Source Voltage V_GS max — ±20 V
dv/dt Rated — Yes
AEC-Q101 Qualification — Qualified
Lead Plating — Pb-free
Marking Code — [DATA_NEEDED: top-side marking code]
Packaging — Tape and Reel

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