IRLML6346TRPBF vs IRLML2803TRPBF Vergleich
Detaillierter Direktvergleich von IRLML6346TRPBF von Infineon und IRLML2803TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLML6346TRPBF | IRLML2803TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,18 | $0,13 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) | 3.4 A (TA=25C) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max @ VGS=2.5V | 63 mOhm | — |
| RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Drive Capability | 2.5V logic-level | — |
| Maximum Power Dissipation (PD) | 1.3 W (TA=25C, 1in2 FR4) | — |
| Betriebs-Sperrschichttemperatur | -55C to +150C | — |
| Gehäuse | Micro3 / SOT-23 | Micro3 / SOT-23 (3-pin) |
| Montageart | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET | IR MOSFET Generation V |
| MSL-Level | 1 | 1 |
| Lead-Free Finish | Yes (PBF suffix) | — |
| RoHS-Status | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRLML2803TRPBF |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25C | — | 1.2 A |
| On-Resistance RDS(on) at VGS=4.5V | — | 250 mOhm maximum |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th)] |
| Gate Charge (Qg) | — | 3.3 nC typical |
| Power Dissipation (PD) at TA=25C | — | 540 mW |
| Betriebstemperaturbereich | — | -55C to +150C (TJ) |
| Gate Drive Level | — | Logic-level (driven from 3.3V / 5V) |
| RoHS Compliance | — | Compliant, Halogen-Free |