IRLR024NTRPBF vs IRFR024NTRPBF Vergleich

Detaillierter Direktvergleich von IRLR024NTRPBF von Infineon und IRFR024NTRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRLR024NTRPBF IRFR024NTRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,46 $0,31
FET Type N-Channel MOSFET, Metal Oxide —
Drain-to-Source Voltage (Vdss) 55 V —
Continuous Drain Current (Id) at Tc=25C 17 A —
Continuous Drain Current (Id) at Tc=100C [DATA_NEEDED: Id at Tc=100C] —
Rds(on) Max @ Vgs=10V 65 mOhm —
Gate Threshold Voltage (Vgs(th)) 1.0 V to 2.0 V —
Total Gate Charge (Qg) 10 nC (typical) —
Power Dissipation (Pd) at Tc=25C 45 W —
Betriebstemperaturbereich -55 C to +175 C —
Montageart Surface Mount Surface Mount
Gehäuse TO-252AA (DPAK) TO-252-3 (DPAK, SC-63), surface mount
Technology HEXFET (Advanced Process Technology) —
Avalanche Rated Yes (fully avalanche rated) —
Gate Drive Level Logic-Level —
Lead-Free / RoHS Lead-Free / RoHS Compliant —
MSL-Level 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Manufacturer — Infineon Technologies (formerly International Rectifier)
Product Series — HEXFET Power MOSFET (5th generation)
Transistortyp — N-Channel MOSFET
Maximum Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) — 17 A (at TC = 25 C)
Pulsed Drain Current (IDM) — 60 A
On-Resistance (RDS(on)) — 75 mOhm max (at VGS = 10 V)
Gate-Source Threshold Voltage (VGS(th)) — 2.0 V to 4.0 V
Typical Gate Charge (Qg) — 13.3 nC
Total Power Dissipation (PD) — 45 W (at TC = 25 C)
Betriebs-Sperrschichttemperatur — -55 C to +175 C
Packaging — Tape and Reel (TR)
RoHS Compliance — Compliant (Pb-free / PbF terminations)

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern