IRLR2705TRLPBF vs IRLR2705TRPBF Vergleich
Detaillierter Direktvergleich von IRLR2705TRLPBF von Infineon und IRLR2705TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLR2705TRLPBF | IRLR2705TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,32 | $0,36 |
| Transistortyp | N-Channel MOSFET (HexFET) | — |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC=25C | 28 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 40 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | 1.0 V to 2.0 V (logic-level) | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Power Dissipation (PD) at TC=25C | 68 W | — |
| Betriebstemperaturbereich | -55C to +175C | — |
| Gehäuse | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Avalanche Rated | Yes (fully avalanche rated) | Yes |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant | — |
| Technology | IR MOSFET (HEXFET, 5th generation) | HEXFET (IR MOSFET generation 5) |
| Configuration | Single N-Channel | — |
| MSL-Level | 1 (unlimited floor life at <30C / 85% RH) | [DATA_NEEDED: MSL rating per JEDEC J-STD-020] |
| FET Type | — | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25C | — | 28 A |
| Continuous Drain Current (ID) at TA=25C | — | [DATA_NEEDED: ID at TA=25C with 1in2 copper] |
| RDS(on) Max at VGS=10V | — | 40 mOhm |
| RDS(on) Max at VGS=5V | — | [DATA_NEEDED: RDS(on) at VGS=5V] |
| Gate-to-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS absolute max, +/-V] |
| Gate Threshold Voltage (VGS(th)) | — | Logic-Level (compatible with 4V drive) |
| Total Gate Charge (Qg) | — | 16.7 nC |
| Power Dissipation (PD) at Tc=25C | — | 68 W |
| Power Dissipation (PD) at TA=25C | — | [DATA_NEEDED: PD at TA=25C with 1in2 copper] |
| Betriebs-Sperrschichttemperatur | — | -55C to +175C |
| Lead-Free / RoHS | — | Yes (Pb-free, RoHS compliant) |