IRS2005STRPBF vs IR21271SPBF Vergleich

Detaillierter Direktvergleich von IRS2005STRPBF von Infineon und IR21271SPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRS2005STRPBF IR21271SPBF
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,18 $0,71
Funktion Half-Bridge Gate Driver —
Driven Configuration High-Side and Low-Side (Half-Bridge) —
Channel Type Independent —
Anzahl der Ausgänge 2 —
Logic Type Non-Inverting —
Maximum Offset Voltage (High-Side) 200 V —
Peak Source Current (typ.) 0.29 A —
Peak Sink Current (typ.) 0.6 A —
Supply Voltage (VCC) [DATA_NEEDED: VCC range min/max] —
Undervoltage Lockout VCC and VBS UVLO integrated —
Input Compatibility 3.3 V / 5 V logic-level inputs —
Gehäuse / Bauform 8-SOIC (0.154", 3.90 mm width) —
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -40 °C to +125 °C -40C to +125C (industrial)
Packaging Tape & Reel (TR) —
Product Status Active —
RoHS-Status Compliant (PBF suffix indicates Pb-free) Compliant
Product Type — Single-channel high-side gate driver with current sensing
Technology — HVIC and latch-immune CMOS
Maximum Floating Supply Voltage — 600 V
Output Source Current — 0.25 A
Output Sink Current — 0.5 A
Gate Drive Voltage Range — 9 V to 20 V (per related IR2127 datasheet family)
Configuration — High-side, low-side capable (floating channel)
Input Logic Compatibility — 3.3 V CMOS / LSTTL
Input Type — Non-inverting
Negative Transient Tolerance (dV/dt) — Tolerant
Bootstrap Operation — Supported (floating channel)
Integrated Current Sensing — Yes
Gehäuse — 8-SOIC
Lead Finish — Lead-free (PbF)
Number of Channels — 1

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern