IRS2011STRPBF vs IR25606STRPBF Vergleich

Detaillierter Direktvergleich von IRS2011STRPBF von Infineon und IR25606STRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRS2011STRPBF IR25606STRPBF
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,55 $1,05
Funktion Half-Bridge Gate Driver Half-Bridge Gate Driver
Configuration High-Side and Low-Side, Independent Channels Non-Inverting, High-Side and Low-Side
Anzahl der Ausgänge 2 2 (High Side / Low Side)
Maximum Offset Voltage (High-Side) 200 V —
Output Current (Source / Sink) 1 A typical / 1 A typical —
Propagation Delay (ton/toff) 60 ns typical —
Delay Matching 20 ns maximum —
Logic Input Compatibility 3.3 V CMOS / LSTTL —
Bootstrap Supply Integrated bootstrap diode, floating channel —
Supply Voltage (VCC) 10 V to 20 V 10 V to 20 V
Negative Transient Tolerance Yes, dV/dt immune —
Gehäuse 8-SOIC (DSO-8) 8-SOIC (0.154", 3.90 mm width)
Betriebstemperatur -40 C to +125 C -40 C to +125 C
Montageart Surface Mount Surface Mount
RoHS-Status Compliant (PBF suffix) Compliant (PBF suffix)
Suitable Drivers MOSFETs and IGBTs —
Number of Drivers — 2
Driven Configuration — Half-Bridge
High-Side Voltage (Offset) — Up to 600 V
Logic Input Voltage — Compatible with 3.3 V and 5 V logic
Source Current (typ.) — 200 mA
Sink Current (typ.) — 350 mA
Input Type — Non-Inverting
Rise Time (typ.) — [DATA_NEEDED: rise time]
Fall Time (typ.) — [DATA_NEEDED: fall time]
Propagation Delay (typ.) — [DATA_NEEDED: propagation delay]
Under-Voltage Lockout (UVLO) — Yes, on VCC and VB
Shoot-Through Protection — Integrated
MSL-Level — [DATA_NEEDED: MSL level]
Lead-Free — Yes (PBF suffix)
Packaging — Tape and Reel (TR suffix)

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