IRS2110SPBF vs IR2132SPBF Vergleich

Detaillierter Direktvergleich von IRS2110SPBF von Infineon und IR2132SPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRS2110SPBF IR2132SPBF
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,72 $5,55
Driver Type High and Low Side, Half-Bridge —
Number of Drivers 2 —
Ausgangskonfiguration Non-Inverting —
Peak Source/Sink Current 2.5 A / 2.5 A —
Offset Voltage (High-Side) Up to 500 V —
Logic Supply Voltage (VCC) 10 V to 20 V —
Floating Supply Voltage (VBS) 10 V to 20 V (25 V abs max) —
Propagation Delay (typ.) 120 ns —
Rise Time (typ.) 25 ns —
Fall Time (typ.) 17 ns —
Undervoltage Lockout Yes (VCC and VBS) —
Input Logic Compatibility TTL / CMOS with hysteresis —
Betriebstemperaturbereich -40 C to +125 C -40C to +125C
Gehäuse 16-SOIC (SOIC-16 W) 28-SOIC (Wide Body, 7.50 mm)
Montageart Surface Mount Surface Mount
RoHS-Status Compliant (Pb-free) —
MSL-Level 3 —
Part Number — IR2132SPBF
Manufacturer — Infineon Technologies (formerly International Rectifier)
Funktion — Half-Bridge Gate Driver IC (3-phase, 6-channel)
Configuration — Inverting input
Anzahl der Ausgänge — 6 (3 high-side, 3 low-side)
Maximum Offset Voltage (High-Side) — 600 V
Output Current (Source/Sink) — 0.5 A
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Logic Input Compatibility — CMOS/LSTTL, down to 2.5 V logic
Typical Deadtime — 0.8 us
Undervoltage Lockout (UVLO) — Yes, all 6 channels
Bootstrap Design — Required for high-side channels
dV/dt Immunity — Yes
Negative VS Transient Tolerance — Yes
Lead-Free / RoHS — Yes (PbF suffix, RoHS compliant)
Packaging — Tube
Topologie — 3-phase bridge driver for MOSFETs/IGBTs

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