IRS21814MTRPBF vs IRS21867STRPBF Vergleich

Detaillierter Direktvergleich von IRS21814MTRPBF von Infineon und IRS21867STRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRS21814MTRPBF IRS21867STRPBF
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,81 $1,55
Configuration High and Low Side, Independent —
Driver Channels 2 (half-bridge) —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Floating Supply Voltage (VBS) 10 V to 20 V (bootstrap) —
Offset Voltage (High-Side) Up to +600 V —
Peak Source Current (typ.) 1.9 A —
Peak Sink Current (typ.) 2.3 A —
Logic Input Compatibility 3.3 V and 5 V CMOS/LSTTL —
Propagation Delay (typ.) 180 ns —
Delay Matching (HS to LS) [DATA_NEEDED: HS-LS delay matching spec] —
Undervoltage Lockout Yes (VCC and VBS) Yes (VCC and VBS)
dV/dt Immunity Yes (negative-transient tolerant) —
Gehäuse 16-MLPQ (4x4 mm) with Exposed Pad 8-SOIC (SOIC-8, 8-pin SOIC N T/R)
Montageart Surface Mount Surface Mount
Betriebstemperatur -40C to +125C —
Packaging Tape & Reel —
RoHS-Status Compliant Compliant
Topologie — High-Side and Low-Side (Half-Bridge)
Offset Voltage (High-Side, max) — 600 V
Output Current (Source/Sink, typical) — 4 A / 4 A
Supply Voltage VCC — 10 V to 20 V
Bootstrap Supply VBS — up to VCC + 600 V (floating)
Input Logic Compatibility — 3.3 V and 5 V CMOS / TTL
Rise Time (typ, 1 nF load) — 22 ns
Fall Time (typ, 1 nF load) — 18 ns
Turn-On Propagation Delay (typ) — 170 ns
Turn-Off Propagation Delay (typ) — 170 ns
Operating Temperature Range (TJ) — -40C to +150C
MSL-Level — 2
Lead-Free Status — Lead Free
Channel Count — 2 (1 high-side + 1 low-side)
Input Type — Non-Inverting (HIN, LIN)

Datenblätter & Ressourcen

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