ISC011N06LM5ATMA1 vs IQE008N03LM5ATMA1 Vergleich

Detaillierter Direktvergleich von ISC011N06LM5ATMA1 von Infineon und IQE008N03LM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter ISC011N06LM5ATMA1 IQE008N03LM5ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,74 $0,94
Manufacturer Infineon Technologies Infineon Technologies
Part Number ISC011N06LM5ATMA1 —
Technology OptiMOS 5 OptiMOS 5, Source-Down
Polarity / Channel Type N-Channel N-Channel
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta 37 A —
Continuous Drain Current (ID) at Tc 288 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 188 W —
RDS(on) max at VGS=10V 1.15 mOhm —
Gehäuse PG-TDSON-8-17 (SuperSO8 5x6 mm) PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down
Montageart Surface Mount Surface Mount
Pin-Anzahl 8 —
Betriebstemperaturbereich -55C to +175C -55°C to +150°C (typical MOSFET junction rating)
RoHS-Status Compliant Compliant (per LCSC listing)
MSL-Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] 2 V (at 250 µA per LCSC snippet)
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Product Family — OptiMOS 5
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at TA=25°C — 27 A
Continuous Drain Current (ID) at TC=25°C — 253 A
On-Resistance RDS(on) Typical — 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet)
Power Dissipation at TA=25°C — 2.1 W
Power Dissipation at TC=25°C — 89 W
Gate-Source Voltage (VGS) Max — ±20 V (typical MOSFET rating)

Datenblätter & Ressourcen

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