ISC016N08NM8SCATMA1 vs IQE036N08NM6CGATMA1 Vergleich
Detaillierter Direktvergleich von ISC016N08NM8SCATMA1 von Infineon und IQE036N08NM6CGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
ISC016N08NM8SCATMA1 - 80V OptiMOS 8 N-Channel MOSFET | Infineon
ISC016N08NM8SCATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | ISC016N08NM8SCATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,72 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 8 | OptiMOS 6 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current at TA=25°C (ID) | 29 A | — |
| Continuous Drain Current at TC=25°C (ID) | 269 A | — |
| Power Dissipation at TC=25°C (PD) | 263 W | — |
| Gehäuse | PG-WSON-8-2 (SuperSO8 DSC, 5x6 mm) | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 8 (shield-gate trench) | Trench MOSFET, OptiMOS 6 |
| Betriebstemperaturbereich | -55C to +175C | -55 C to +175 C (junction, Tj) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| On-Resistance RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg @ VGS=10V] | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| Drain Tab Connection | Top + bottom exposed (dual-side cooling) | — |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 80 V |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | — | 118 A |
| Continuous Drain Current (Id) at Ta | — | 16.7 A |
| Rds(on) max at Vgs=10V | — | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 3.5 V (max) |
| Power Dissipation at Tc | — | 125 W |
| Power Dissipation at Ta | — | 2.5 W |
| Configuration | — | Single N-channel, Source-Down |