ISC028N03LF2SATMA1 vs ISC025N08NM5LF2ATMA1 Vergleich

Detaillierter Direktvergleich von ISC028N03LF2SATMA1 von Infineon und ISC025N08NM5LF2ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
ISC025N08NM5LF2ATMA1 ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter ISC028N03LF2SATMA1 ISC025N08NM5LF2ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,86 $1,74
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 30V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) max 30 V —
Continuous Drain Current (ID) at TA=25C 24 A —
Continuous Drain Current (ID) at TC=25C 128 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V 2.8 mOhm —
Gate Threshold Voltage VGS(th) typ 2.35 V —
Power Dissipation at TA 3 W —
Power Dissipation at TC 83 W —
Betriebs-Sperrschichttemperatur -55 C to +175 C —
Gehäuse PG-TDSON-8-62 (5x6 mm) with exposed pad PG-TDSON-8 FL (Surface Mount)
Montageart Surface Mount Surface Mount
RoHS / Lead-Free Yes (RoHS compliant) —
MSL-Level 1 (per JEDEC J-STD-020) —
FET Type — N-Channel
Technology — MOSFET (Metal Oxide), OptiMOS 5 LF2
Drain-Source Voltage (VDS) Max — 80 V
Continuous Drain Current (ID) @ TA=25°C — 23 A
Continuous Drain Current (ID) @ TC=25°C — 198 A
On-Resistance (RDS(on)) Max — 2.55 mΩ
Gate-Source Threshold (VGS(th)) Max — 3.9 V
Total Gate Charge (Qg) Max — 96 nC
Power Dissipation @ TA — 3 W
Power Dissipation @ TC — 217 W
Betriebstemperaturbereich — [DATA_NEEDED: operating temperature range]
Polarity — N-Channel
RoHS-Status — Compliant
Ordering Code Suffix — ATMA1 (Tape & Reel, 13-inch)

Datenblätter & Ressourcen

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