ISC033N03LF2SATMA1 vs ISC011N04NM7VATMA1 Vergleich
Detaillierter Direktvergleich von ISC033N03LF2SATMA1 von Infineon und ISC011N04NM7VATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC033N03LF2SATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,81 | $0,41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| MPN | ISC033N03LF2SATMA1 | — |
| Part Family | OptiMOS LF2 (<= 40V) | — |
| Transistortyp | N-Channel MOSFET | — |
| Technology | OptiMOS trench (<= 40V) | Trench MOSFET, silicon |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) at TC | 108 A | 256 A |
| Continuous Drain Current (ID) at TA | 22 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum On-Resistance RDS(on) max | 3.3 mOhm at VGS = 10 V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage rating] | — |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | — |
| Power Dissipation (PD) at TA | 3 W | — |
| Power Dissipation (PD) at TC | 71 W | — |
| Gehäuse | PG-TDSON-8-62 (Source-Down, 5x6 mm) | PG-TDSON-8 (source-down) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | -55 °C to +175 °C (TJ) |
| Junction Temperature (TJ) max | [DATA_NEEDED: junction temperature max] | — |
| Configuration | Single N-channel, source-down | — |
| RoHS-Status | Compliant | — |
| MSL-Level | [DATA_NEEDED: MSL level] | MSL 1 (per JEDEC J-STD-020) |
| Product Family | — | OptiMOS 7 Power-Transistor |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| RoHS Compliance | — | Compliant (per Infineon product page) |