ISC0703NLSATMA1 vs BSC077N12NS3GATMA1 Vergleich
Detaillierter Direktvergleich von ISC0703NLSATMA1 von Infineon und BSC077N12NS3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΩ | Infineon
BSC077N12NS3GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | ISC0703NLSATMA1 | BSC077N12NS3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,51 | $0,71 |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 120 V |
| Continuous Drain Current (ID) at Ta=25C | 13 A | — |
| Continuous Drain Current (ID) at Tc=25C | 57 A | — |
| Power Dissipation (PD) at Ta=25C | 3 W | — |
| Power Dissipation (PD) at Tc=25C | 44 W | — |
| Technology | Trench MOSFET (OptiMOS family) | — |
| Gehäuse | PG-TDSON-8 (5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (junction) | — |
| Standard Package Quantity | 5,000 (reel) | — |
| MSL-Level | [DATA_NEEDED: MSL level] | 1 |
| RoHS-Status | Compliant | Compliant |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS rating] | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 3 (120 V) |
| Transistortyp | — | N-Channel MOSFET (enhancement-mode trench) |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Continuous Drain Current (ID) at Ta | — | 13.4 A |
| Continuous Drain Current (ID) at Tc | — | 98 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-State Resistance RDS(on) max @ VGS=10V | — | 7.7 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 2.5 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Power Dissipation (PD) at Tc | — | 139 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +150C |
| Pin-Anzahl | — | 8 |
| Automotive Grade | — | Yes (per Infineon part number suffix / datasheet) |