ISC151N08NM6ATMA1 vs IAUC120N04S6N010ATMA1 Vergleich
Detaillierter Direktvergleich von ISC151N08NM6ATMA1 von Infineon und IAUC120N04S6N010ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | ISC151N08NM6ATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $0,68 |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (TA=25°C) | 9.2 A | — |
| Kontinuierlicher Drain-Strom (TC=25°C) | 37 A | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 48 W | — |
| On-Resistance RDS(on) max | 15.1 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Technology | OptiMOS 6 | OptiMOS 6 |
| Gehäuse | PG-TDSON-8 FL | PG-TDSON-8-34 (5x6 mm leadless) |
| Montageart | Surface Mount | Surface Mount |
| Anzahl der Pins | 8 | — |
| Channel Mode | Enhancement | — |
| Betriebstemperatur | -55 °C to +175 °C | — |
| RoHS-Status | Compliant | Compliant |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | — | 40 V |
| Continuous Drain Current (Id, Tc) | — | 150 A |
| Power Dissipation (Pd, Tc) | — | 150 W |
| RDS(on) at VGS=10V (typ) | — | 1.0 mΩ |
| RDS(on) at VGS=10V (max per LCSC excerpt) | — | 1.03 mΩ |
| Gate-Source Threshold (VGS(th), typ) | — | 3 V (at 90 µA) |
| Automotive Qualification | — | AEC-Q101 |
| Betriebstemperaturbereich | — | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) |
| MSL-Level | — | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| Gate Drive Recommendation | — | 10 V VGS for full RDS(on) spec |
| Polarity | — | Single N-channel |