ISC151N08NM6ATMA1 vs IQDH88N06LM5CGSCATMA1 Vergleich
Detaillierter Direktvergleich von ISC151N08NM6ATMA1 von Infineon und IQDH88N06LM5CGSCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC151N08NM6ATMA1 | IQDH88N06LM5CGSCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $2,31 |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (TA=25°C) | 9.2 A | — |
| Kontinuierlicher Drain-Strom (TC=25°C) | 37 A | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 48 W | — |
| On-Resistance RDS(on) max | 15.1 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Technology | OptiMOS 6 | OptiMOS 5 (trench) |
| Gehäuse | PG-TDSON-8 FL | PG-WHTFN-9-U02 (PQFN 5x6) |
| Montageart | Surface Mount | Surface Mount |
| Anzahl der Pins | 8 | — |
| Channel Mode | Enhancement | — |
| Betriebstemperatur | -55 °C to +175 °C | — |
| RoHS-Status | Compliant | Compliant |
| Drain-Source Voltage (V(BR)DSS) | — | 60 V |
| Continuous Drain Current (Ta=25°C) | — | 42 A |
| Kontinuierlicher Drain-Strom (TC=25°C) | — | 447 A |
| On-Resistance RDS(on) typical @ VGS=10V | — | 0.86 mΩ |
| Power Dissipation (Ta=25°C) | — | 3 W |
| Verlustleistung (TC=25°C) | — | 333 W |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge Qg typical | — | [DATA_NEEDED: Qg typical nC] |
| Betriebstemperaturbereich | — | -55°C to +175°C (TJ) |
| Pin-Anzahl | — | 9 (with exposed pad) |
| Cooling | — | Dual-side cooling capable |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |
| Polarity | — | N-Channel |
| Configuration | — | Single |