ISK057N04LM6ATLA1 vs ISK057N04LM6ATSA1 Vergleich
Detaillierter Direktvergleich von ISK057N04LM6ATLA1 von Infineon und ISK057N04LM6ATSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISK057N04LM6ATLA1 | ISK057N04LM6ATSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,52 | $0,30 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 | — |
| Transistortyp | N-Channel MOSFET | — |
| Technology | Trench (OptiMOS 6) | OptiMOS 6 Trench |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tc | 64 A | — |
| Continuous Drain Current (ID) at Ta | [DATA_NEEDED: ID at TA=25C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) max] | — |
| RDS(on) typical at VGS=10V | 5.7 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | 2.3 V (typ) |
| Gate Charge (Qg total) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | 870 pF |
| Power Dissipation (PD) at Ta=25C | 2.1 W | — |
| Power Dissipation (PD) at Tc=25C | 39.1 W | — |
| Betriebstemperaturbereich | -55 °C to +150 °C | -55C to +150C |
| Gehäuse / Bauform | PG-VSON-6-1 (PQFN 2x2) | — |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | — |
| Packaging | Tape & Reel (TR) | — |
| DigiKey Part Number | 448-ISK057N04LM6ATLA1TR-ND | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Continuous Drain Current (ID) at Ta=25C | — | 15 A |
| Continuous Drain Current (ID) at Tc=25C | — | 64 A |
| Power Dissipation (PD) at Ta | — | 2.1 W |
| Power Dissipation (PD) at Tc | — | 39.1 W |
| On-Resistance RDS(on) at VGS=10V | — | [DATA_NEEDED: typical RDS(on) at 10V] |
| On-Resistance RDS(on) at VGS=4.5V | — | 8.3 mOhm |
| Total Gate Charge (Qg) at VGS=10V | — | 12 nC |
| Output Capacitance (Coss) | — | 290 pF |
| Reverse Transfer Capacitance (Crss) | — | 21 pF |
| Gehäuse | — | PG-VSON-6-1 (PQFN 2x2 mm) |