ISZ025N06NM6ATMA1 vs IQE036N08NM6CGATMA1 Vergleich
Detaillierter Direktvergleich von ISZ025N06NM6ATMA1 von Infineon und IQE036N08NM6CGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
ISZ025N06NM6ATMA1 - 60V 137A OptiMOS 6 N-Channel MOSFET | Infineon
ISZ025N06NM6ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | ISZ025N06NM6ATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,02 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60 V | OptiMOS 6 |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 137 A | — |
| Continuous Drain Current (ID, Ta) | 22 A | — |
| Maximum RDS(on) at VGS=10V | 2.5 mΩ | — |
| Gate Threshold Voltage (VGS(th), typ) | 3.3 V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 100 W | — |
| Gehäuse | PG-TSDSON-8-34 (5x6 mm) | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 °C to +175 °C | -55 C to +175 C (junction, Tj) |
| Gate Drive Voltage (VGS) | ±20 V max | — |
| Technology | Trench MOSFET | Trench MOSFET, OptiMOS 6 |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL moisture sensitivity level] | MSL1 (per JEDEC J-STD-020) |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 80 V |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | — | 118 A |
| Continuous Drain Current (Id) at Ta | — | 16.7 A |
| Rds(on) max at Vgs=10V | — | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 3.5 V (max) |
| Power Dissipation at Tc | — | 125 W |
| Power Dissipation at Ta | — | 2.5 W |
| Configuration | — | Single N-channel, Source-Down |