ISZ028N03LF2SATMA1 vs ISC015N06NM5ATMA1 Vergleich

Detaillierter Direktvergleich von ISZ028N03LF2SATMA1 von Infineon und ISC015N06NM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter ISZ028N03LF2SATMA1 ISC015N06NM5ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,49 $0,62
FET Type N-Channel —
Technology StrongIRFET 2 (Trench MOSFET) Trench MOSFET (OptiMOS 5)
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Tc 128 A —
Continuous Drain Current (ID) at Ta 22 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate Threshold Voltage (VGS(th)) 2.35 V —
On-Resistance (RDS(on)) max 2.8 mΩ —
Power Dissipation (Tc) 83 W —
Power Dissipation (Ta) 3 W —
Gehäuse PG-TSDSON-8 FL (FL = flat lead) PG-TDSON-8 (PQFN 5x6) Drain-Down
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -55C to +175C (junction, typical) -55 C to +175 C
Gate Drive Voltage (recommended) 10 V (logic level at 4.5 V) —
RoHS-Status Compliant Compliant
MSL-Level 1 —
Avalanche Energy Rated Yes (single-pulse) —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TA=25C — 33 A
Pulsed Drain Current (IDM) at TC=25C — 259 A
On-Resistance RDS(on) typical at VGS=10V — 1.5 mOhm
Total Power Dissipation (TA) — 3 W
Total Power Dissipation (TC) — 188 W
MSL (Moisture Sensitivity Level) — 1

Datenblätter & Ressourcen

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