ISZ230N10NM6ATMA1 vs BSC070N10NS5ATMA1 Vergleich
Detaillierter Direktvergleich von ISZ230N10NM6ATMA1 von Infineon und BSC070N10NS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISZ230N10NM6ATMA1 | BSC070N10NS5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,71 | $0,68 |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (Ta) | 7.7 A | — |
| Continuous Drain Current (Tc) | 31 A | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 48 W | — |
| On-Resistance RDS(on) at VGS=10V | 23 mΩ (typ, ID=10A) | — |
| Gate Threshold Voltage VGS(th) | 3.3 V (typ at 13 µA) | — |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 5 (N-channel trench) |
| Gehäuse | PG-TSDSON-8 FL (3.3 x 3.3 mm) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 °C to +150 °C (junction) | — |
| Gate Drive Voltage (recommended) | 10 V | — |
| MSL-Level | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Family | OptiMOS 6 (100V class) | — |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 80 A |
| RDS(on) max @ VGS=10V | — | 7 mOhm |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg] |
| Power Dissition at TC=25C (Ptot) | — | 83 W |
| Power Dissipation at TA=25C | — | 2.5 W |
| Betriebs-Sperrschichttemperaturbereich | — | -55 C to +150 C |
| Lead-Free | — | Yes |
| Typical Application | — | Synchronous rectification in SMPS |