ITS4100S-SJ-N vs ITS4880R Vergleich

Detaillierter Direktvergleich von ITS4100S-SJ-N von Infineon und ITS4880R von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter ITS4100S-SJ-N ITS4880R
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,32 $5,89
Product Type Smart High-Side Power Switch Smart High-Side Power Switch
Series PROFET (MINI-PROFET family) —
Supply Voltage Range 5 V to 34 V (operating) —
Maximum Supply Voltage 60 V (load-dump tolerant) —
Continuous Load Current 1 A —
On-Resistance (typ) 70 mOhm —
Number of Channels 1 8
Switch Type N-Channel High-Side —
Input Logic Compatibility CMOS-compatible, active-high —
Built-in Protection Overload, short-circuit, thermal shutdown, overvoltage —
Thermal Shutdown Behavior Auto-restart —
Load Dump Protection Yes (integrated) —
Reverse Battery Protection External network required —
Output Capacitor Requirement 1 nF ceramic minimum —
Betriebstemperatur -40C to +125C -40C to +125C (junction)
Gehäuse PG-DSO-8 (DSO-8) PG-DSO-36-26
Montageart Surface Mount Surface Mount
RoHS-Status Compliant Compliant
Technology — Smart SIPMOS (N-channel vertical power FET + charge pump, monolithic)
Nominal Per-Channel Current — 0.625 A
Operating Supply Voltage (Vbb) — 11 V to 45 V
Load Dump Transient Rating — 60 V
Input Compatibility — Ground-referenced CMOS or Vbb/2
Diagnostic Feedback — Common diagnostic output (open-load, fault)
Protection Features — Overload, short-circuit, over-temperature, over-voltage clamp, ESD
Channel-to-Channel Matching — Matched N-FET outputs with shared charge pump
Target Application — 24 V DC industrial loads

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