ITS4200SSJDXUMA1 vs BTS5215LAUMA1 Vergleich

Detaillierter Direktvergleich von ITS4200SSJDXUMA1 von Infineon und BTS5215LAUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter ITS4200SSJDXUMA1 BTS5215LAUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,98 $1,18
Manufacturer Infineon Technologies —
Part Family PROFET (MINI-PROFET) —
Switch Type High-Side N-Channel, 1:1 —
On-State Resistance (R_DS(on)) 200 mOhm (typical) —
Continuous Load Current 1.2 A —
Supply Voltage (Vbb) 6 V to 52 V —
Ruhestrom 0.8 mA —
Maximum Power Dissipation 1400 mW —
Betriebstemperatur -40 C to +150 C -40C to +150C (TJ) [DATA_NEEDED: ambient range exact]
Gehäuse PG-DSO-8 (DSO-8) PG-DSO-12-9
Montageart Surface Mount —
Ausgangskonfiguration Single high-side switch —
Protection Features Overload, current limit, short circuit, thermal shutdown with restart, overvoltage (load dump), undervoltage shutdown Overcurrent, overtemperature, overvoltage, short-circuit, undervoltage
Diagnostic Output Status pin for fault feedback —
Load Type Resistive and inductive loads —
RoHS-Status Compliant Compliant
Product Type — Smart High-Side Power Switch
Number of Channels — 2
On-State Resistance (RDS(on)) — 90 mΩ typical per channel
Continuous Output Current per Channel — 3.7 A
Operating Voltage Range — 8 V to 36 V
Standby Current — Very low (datasheet value [DATA_NEEDED: standby current uA])
Input Logic Compatibility — CMOS-compatible, ground-referenced
Diagnostic Feedback — Status feedback per channel
MOSFET Technology — N-channel vertical power MOSFET with charge pump
Load Type Support — Resistive and inductive loads
Demagnetization — Fast demagnetization of inductive loads

Datenblätter & Ressourcen

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