K3KL7L70EM-MGCU vs K3KL8L80QM-MUCT Vergleich
Detaillierter Direktvergleich von K3KL7L70EM-MGCU von Samsung Electronics und K3KL8L80QM-MUCT von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K3KL7L70EM-MGCU | K3KL8L80QM-MUCT |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $12,00 | $13,40 |
| Speichertyp | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Density | 12 Gbit | 32 Gb (4 GB) |
| Speicherorganisation | x32 | [DATA_NEEDED: organization (xN bit width)] |
| Gehäuse | 315-ball FBGA | FBGA (original package, 315-ball class) |
| Montageart | Surface Mount (BGA) | Surface Mount |
| Product Status | Mass Production | — |
| Schnittstelle | LPDDR5X | LPDDR5X channel interface |
| Manufacturer | Samsung Semiconductor | — |
| Supply Voltage (Core) | [DATA_NEEDED: core supply voltage] | — |
| Datenrate | [DATA_NEEDED: data rate in Mbps/pin] | [DATA_NEEDED: data rate per pin (Gbps)] |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Refresh | Self-refresh supported (per LPDDR5X family) | — |
| Power Modes | Deep sleep, self refresh, power down (per LPDDR5X family) | — |
| Fab Location | Johor, Malaysia (listed by distributor) | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Supply Voltage Class | — | [DATA_NEEDED: VDD/VDDQ voltage] |
| Speed Grade | — | QM (per Samsung part numbering) |
| Series | — | LPDDR5X |
| Marke | — | Samsung Semiconductor |
| Packaging Suffix | — | MUCT |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |
| Application Segment | — | Mobile / AI edge computing |