K3LK4L40DM-BGCT vs MT40A256M16GE-075E:B Vergleich
Detaillierter Direktvergleich von K3LK4L40DM-BGCT von Samsung Electronics und MT40A256M16GE-075E:B von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ AktivMicron Technology
MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron
MT40A256M16GE-075E:B ✓ AktivSpezifikationsvergleich
| Parameter | K3LK4L40DM-BGCT | MT40A256M16GE-075E:B |
|---|---|---|
| Marke | Samsung Electronics | Micron Technology |
| Kategorie | DRAM | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $40,50 | $3,95 |
| Speichertyp | DRAM (SDRAM component) | DDR4 SDRAM |
| Manufacturer | Samsung Electronics | — |
| Density | [DATA_NEEDED: Density] | — |
| Organization (x-width) | [DATA_NEEDED: Organization] | — |
| Datenrate | [DATA_NEEDED: Data Rate] | 2666 MT/s (DDR4-2666) |
| Supply Voltage Class | [DATA_NEEDED: Supply Voltage] | — |
| CAS-Latenz | [DATA_NEEDED: CAS Latency] | — |
| Package Type | BGA (per -BGC ordering-code suffix) | — |
| Package Ball Count | [DATA_NEEDED: Ball Count] | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range for standard grade] |
| Refresh Rate | [DATA_NEEDED: Refresh Interval] | — |
| RoHS-Status | [DATA_NEEDED: RoHS Status] | — |
| Lead Free | [DATA_NEEDED: Lead-Free Status] | — |
| MSL-Level | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| Packaging | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] | — |
| Speichergröße | — | 4 Gbit |
| Speicherorganisation | — | 256M x 16 |
| Memory Interface | — | Parallel |
| Clock Frequency | — | 1.33 GHz |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP | — | 2.5 V, -125 mV/+250 mV |
| Internal Banks | — | 16 |
| Refresh | — | 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C |
| I/O Type | — | 1.2 V pseudo open-drain |
| VREFDQ | — | On-die, internal, adjustable generation |
| Special Features | — | Temperature controlled refresh (TCR) |
| Gehäuse | — | 96-FBGA (9 x 14 mm) |
| Access Time | — | [DATA_NEEDED: CAS latency / access time] |