K3LK8K80CM-MFCP vs K3LKCKC0BM-MGCP Vergleich
Detaillierter Direktvergleich von K3LK8K80CM-MFCP von Samsung Electronics und K3LKCKC0BM-MGCP von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K3LK8K80CM-MFCP | K3LKCKC0BM-MGCP |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | DRAM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $65,63 |
| Speichertyp | LPDDR5 SDRAM | LPDDR5 SDRAM |
| Density | 48 Gbit (6 GB) | 64 Gbit (8 GB) |
| Speicherorganisation | [DATA_NEEDED: organization (x width)] | 2G x32 |
| Pin Speed | 6400 Mbps | — |
| Data Rate (package) | 51.2 GB/s (family max) | — |
| Schnittstelle | LPDDR5 (JESD209-5 class low-power DRAM interface) | CMOS, LPDDR5 |
| Gehäuse | 315-ball FBGA (MFCP) | FBGA-315 (PBGA) |
| Ball Count | 315 | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -40 C to +105 C (automotive-grade) | -25C to +85C |
| Versorgungsspannung | [DATA_NEEDED: VDD/VDDQ voltage] | — |
| Power Saving vs LPDDR4X | Approximately 20% | — |
| Generation | LPDDR5 (5th generation low-power DRAM) | — |
| Application Grade | Automotive-grade storage chip | — |
| Place of Origin | Johor, Malaysia | — |
| RoHS-Status | unknown | Compliant |
| Datenrate | — | 6400 Mbps |
| Supply Voltage (VDD1) | — | 1.05 V |
| Supply Voltage (VDD2/other rails) | — | 1.8 V, 900 mV, 500 mV |
| Technology | — | CMOS DRAM |
| Product Family | — | Samsung LPDDR5 |
| Bandwidth (per Samsung LPDDR5 family) | — | 51.2 GB/s (family-level, 6400 Mbps pin speed) |
| Power Saving (family feature) | — | Up to 20% power saving vs previous generation (Samsung LPDDR5 family) |
| Unit Price | — | USD 57.7195 (LCSC, as of 2026-09-04) |